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| PD -94904 IRG4BC10SDPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Standard Speed CoPack IGBT VCES = 600V * Extremely low voltage drop 1.1Vtyp. @ 2A * S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. * Very Tight Vce(on) distribution * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package * Lead-Free * Generation 4 IGBTs offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing * Lower losses than MOSFET's conduction and Diode losses Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. G E VCE(on) typ. = 1.10V @VGE = 15V, IC = 2.0A n-channel Benefits TO-220AB Absolute Maximum Ratings Max. 600 14 8.0 18 18 4.0 18 20 38 15 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. --- --- --- --- --- Typ. --- --- 0.50 --- 2.0(0.07) Max. 3.3 7.0 --- 80 --- Units C/W g (oz) www.irf.com 1 12/23/03 IRG4BC10SDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)CES/TJ VCE(on) VGE(th) VGE(th)/TJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Temperature Coeff. of Breakdown Voltage -- 0.64 Collector-to-Emitter Saturation Voltage -- 1.58 -- 2.05 -- 1.68 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -9.5 Forward Transconductance 3.65 5.48 Zero Gate Voltage Collector Current -- -- -- -- Diode Forward Voltage Drop -- 1.5 -- 1.4 Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V/C VGE = 0V, IC = 1.0mA 1.7 IC = 8.0A VGE = 15V -- V IC = 14.0A See Fig. 2, 5 -- IC = 8.0A, TJ = 150C 6.0 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 100V, IC =8.0A 250 A VGE = 0V, VCE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150C 1.8 V IC =4.0A See Fig. 13 1.7 IC =4.0A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units 15 22 2.42 3.6 6.53 9.8 76 -- 32 -- 815 1200 720 1080 0.31 -- 3.28 -- 3.60 10.9 1.46 2.6 70 -- 36 -- 890 -- 890 -- 3.83 -- 7.5 -- 280 -- 30 -- 4.0 -- 28 42 38 57 2.9 5.2 3.7 6.7 40 60 70 105 280 -- 235 -- nC Conditions IC = 8.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25C IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. See Fig. 9, 10, 18 IC = 5.0A TJ = 150C, See Fig. 10,11, 18 IC = 8.0A, VCC = 480V VGE = 15V, RG = 100 Energy losses include "tail" and diode reverse recovery. Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 = 1.0MHz TJ = 25C See Fig. 14 IF =4.0A TJ = 125C TJ = 25C See Fig. TJ = 125C 15 VR = 200V TJ = 25C See Fig. 16 di/dt = 200A/s TJ = 125C TJ = 25C See Fig. TJ = 125C 17 ns mJ mJ ns mJ nH pF ns A nC A/s Details of note through are on the last page 2 www.irf.com IRG4BC10SDPBF 10.0 For both: 8.0 LOAD CURRENT (A) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 9.2 W 6.0 Square wave: 60% of rated voltage 4.0 I 2.0 Ideal diodes 0.0 0.1 1 10 100 f, Frequency (KHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 C 10 T = 150 C J I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 10 TJ = 150 C TJ = 25 C V CC = 50V 5s PULSE WIDTH 5s PULSE WIDTH 6 8 10 12 1 0.5 V GE = 15V 80s PULSE WIDTH 1.0 1.5 2.0 2.5 3.0 1 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC10SDPBF 16 3.00 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH IC = 16 A Maximum DC Collector Current(A) 12 2.50 8 2.00 IC = 8A 4 1.50 IC = 4A 0 25 50 75 100 125 150 1.00 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC10SDPBF 500 400 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 8A C, Capacitance (pF) Cies 300 15 Coes 200 10 100 Cres 5 0 1 10 100 0 0 5 10 15 20 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.60 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 3.55 I C = 8A 3.50 100 RG =100 Ohm VGE = 15V VCC = 480V IC = 16 A 10 3.45 IC = IC = 1 8A 4A 3.40 3.35 3.30 0 20 40 60 80 100 RG G Gate Resistance (Ohm) R , , Gate Resistance () 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC10SDPBF 15 Total Switching Losses (mJ) 9 I C , Collector Current (A) RG TJ VCC 12 VGE = 100 100 = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 6 3 0 0 4 8 12 16 20 1 SAFE OPERATING AREA 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 10 TJ = 150C T = 125C J J T = 25C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 6 Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (V) Forward Voltage Drop -- V FM ( V ) Voltage Drop V FM www.irf.com IRG4BC10SDPBF 50 14 VR = 200V TJ = 125C TJ = 25C 45 I F = 8.0A I F = 4.0A 12 10 40 I F = 8.0A I F = 4.0A trr- (nC) 35 Irr- ( A) 8 6 30 4 25 VR = 200V TJ = 125C TJ = 25C 20 100 2 di f /dt - (A/s) 1000 0 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 200 VR = 200V TJ = 125C TJ = 25C 160 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C I F = 8.0A I F = 8.0A di (rec) M/dt- (A /s) 120 I F = 4.0A I F = 4.0A Qrr- (nC) 80 40 0 100 di f /dt - (A/s) 1000 100 100 A di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt, www.irf.com 7 IRG4BC10SDPBF Same type device as D.U.T. 80% of Vce 430F D.U.T. Vge V C 90% 10% 90% td(off) Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf 10% IC 5% t d(on) tr tf t=5s Eoff Ets = (E +Eoff ) on Eon Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = Ic dt Vcc trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Vce Ic Eon = Vce ie dt dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd idIc dt Vd dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC10SDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL = 0 - 480V 480V 4 X I C @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC10SDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 100W (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-220AB Package Outline 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 3 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 21- GATE DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN LEAD ASSIGNMENTS HEXFET 14.09 (.555) 13.47 (.530) 4- DRAIN 4.06 (.160) 3.55 (.140) 4- COLLECTOR 3X 3X 1.40 (.055) 1.15 (.045) 0.93 (.037) 0.69 (.027) M BAM 3X 0.55 (.022) 0.46 (.018) 0.36 (.014) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 2.92 (.115) 2.64 (.104) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T HE AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE P AR T NU MB E R Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 10 www.irf.com |
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